Title :
IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP AlxGa1-xAs layer
Author :
Levine, B.F. ; Bethea, C.G. ; Tsang, W.T. ; Capasso, Federico ; Thornber, K.K.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Electron mobility; Gallium arsenide; Heterojunctions; Laboratories; Laser modes; Optical pulses; Pulse measurements; Time measurement; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21362
