• DocumentCode
    1087698
  • Title

    IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP AlxGa1-xAs layer

  • Author

    Levine, B.F. ; Bethea, C.G. ; Tsang, W.T. ; Capasso, Federico ; Thornber, K.K.

  • Volume
    30
  • Issue
    11
  • fYear
    1983
  • fDate
    11/1/1983 12:00:00 AM
  • Firstpage
    1578
  • Lastpage
    1579
  • Keywords
    Capacitance-voltage characteristics; Electron mobility; Gallium arsenide; Heterojunctions; Laboratories; Laser modes; Optical pulses; Pulse measurements; Time measurement; Velocity measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21362
  • Filename
    1483263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087698