Title :
IIIA-8 measurements of the conduction band discontinuity of MBE-grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profiling
Author :
People, R. ; Wecht, K.W. ; Alavi, K. ; Cho, Andrew Y.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Conducting materials; Electrons; Heterojunctions; Input variables; Laser modes; Laser theory; MOSFETs; Semiconductor devices; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21363
