Title :
IIIB-3 scattering analysis of low surface-effective-field mobility degradation in sub-100Å gate oxide MOSFETS
Author :
Mize, J.P. ; Yu-Pin Han ; Pinto, Joel ; Worley, Rick
fDate :
11/1/1983 12:00:00 AM
Keywords :
Boltzmann equation; Boron; Degradation; Impurities; MOSFET circuits; Numerical models; Scattering; Testing; Thickness measurement; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21366
