InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelength

We summarize our work on back-illuminated photodiodes based on the As-Ga-In-P III-V semiconductor system which, with InP substrates, can provide photodetectors to cover the wavelength range of m. LPE layer growth and material purification techniques are described, as well as the fabrication and characterization of p-i-n photodiodes made from these compounds. The relevant device parameters and their optimization are discussed, and the performance of high-bit-rate optical receivers employing the new detectors is noted. Finally, we suggest some areas where further research might lead both to a better understanding of carrier transport in these heterojunction configurations and to improved devices made from them.