• DocumentCode
    1087823
  • Title

    High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In0.62Ga0.38P active layer

  • Author

    Nitta, Katsumi ; Itaya, Kazuhiko ; Nishikawa, Yoshihiro ; Ishikawa, Masatoshi ; Okajima, M. ; Hatakoshi, G.

  • Author_Institution
    Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
  • Volume
    27
  • Issue
    18
  • fYear
    1991
  • Firstpage
    1660
  • Lastpage
    1661
  • Abstract
    High-power CW operation of transverse-mode stabilised InGaAlP laser diodes has been achieved by using a selectively-buried-ridge waveguide structure with a very thin (150 AA) active layer. A strained In0.62Ga0.38P active layer was adopted to obtain a sufficient bandgap difference between the active and cladding layers. A maximum light output of 106 mW was obtained from the laser with antireflection and high-reflection coatings.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 106 mW; 150 A; InGaAlP laser diodes; SBR lasers; antireflection layers; bandgap difference; cladding layers; high power CW operation; high-reflection coatings; light output; selectively-buried-ridge waveguide structure; semiconductors; strained In 0.62Ga 0.38P active layer; thin active layer; transverse-mode stabilised;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911037
  • Filename
    132868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087823