• DocumentCode
    1087852
  • Title

    The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm region

  • Author

    Capasso, Federico ; Panish, Morton B. ; Sumski, Stanley

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    17
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    273
  • Lastpage
    274
  • Abstract
    We report on the liquid-phase epitaxial (LPE) growth of low doped n-GaSb for long wavelength photodiodes. Very low net donor concentration epilayers ( 5 \\times 10^{14}-5 \\times 10^{15} /cm3) were grown both from undoped Ga rich solutions in the 300-375\\deg C range and by compensation using Ga-rich solutions at \\sim500\\deg C with intentionally added Te. The preparation of Au-GaSb Schottky diodes for C-V profiling is also discussed.
  • Keywords
    Gallium materials/devices; Optical fiber receivers; Semiconductor device doping; Atomic layer deposition; Atomic measurements; Detectors; Doping; Epitaxial growth; Photodiodes; Schottky diodes; Substrates; Tellurium; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071062
  • Filename
    1071062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087852