IVA-5 through-AIN implantation for a high transconductance self-aligned GaAs MESFET

Author

Nishi, Hidetaka ; Onodera, Hidetoshi ; Kawata, Hirotaka ; Yokoyama, Naoki ; Shibatomi, A.

Volume

Issue

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1589

Lastpage

1589

Keywords

Annealing; Argon; Diodes; FETs; Furnaces; Gallium arsenide; MESFETs; Materials science and technology; Passivation; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1983.21377

Filename

1483278

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