Title :
Self-oscillations and dynamic behavior of aged InGaAsP laser diodes
Author :
Channin, D.J. ; Olsen, Gregory H. ; Ettenberg, Michael
Author_Institution :
RCA Labs., Princeton, NJ, USA
fDate :
2/1/1981 12:00:00 AM
Abstract :
The pulse response of vapor-phase grown InGaAsP/InP 1.3 μm laser diodes was studied before and after accelerated aging. Dynamic behavior, including self-sustained oscillations, was found to be largely unaffected by the aging process. This indicates that these lasers can be preselected for specified modulation characteristics that will remain constant over the operating life of the diode.
Keywords :
Gallium materials/lasers; Pulsed lasers; Semiconductor device reliability; Accelerated aging; Diode lasers; Indium phosphide; Laser modes; Optical modulation; Optical pulses; Pulse modulation; Ring lasers; Stability; Substrates;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071065
