DocumentCode
1087892
Title
Low dark-current, high gain GaInAs/InP avalanche photodetectors
Author
Diadiuk, Vicky ; Groves, Steven H. ; Hurwitz, Charles E. ; Iseler, Gerald W.
Author_Institution
Lincoln Lab., M.I.T., Lexington, MA, USA
Volume
17
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
260
Lastpage
264
Abstract
High performance inverted-mesa GaInAsP/InP avalanche photodiodes responding out to 1.25 μm have been fabricated. Uniform avalanche gains 
, of 700 dark-current densities of 
A/cm2at 
, and an excess noise factor of ∼3 at have been achieved by placing the p-n junction in the InP and using a new passivation technique. Pulse-response rise times of less than 160 ps, limited by the rise time of the mode-locked Nd:YAG laser pulse, were measured with an avalanche gain of 40.
, of 700 dark-current densities of A/cm2at , and an excess noise factor of ∼3 at have been achieved by placing the p-n junction in the InP and using a new passivation technique. Pulse-response rise times of less than 160 ps, limited by the rise time of the mode-locked Nd:YAG laser pulse, were measured with an avalanche gain of 40.Keywords
Avalanche photodiodes; Optical fiber receivers; Avalanche photodiodes; Gain measurement; Indium phosphide; Laser mode locking; Laser noise; Optical pulses; P-n junctions; Passivation; Photodetectors; Pulse measurements;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071066
Filename
1071066
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