Title :
IVA-7 a new high purity Si doping source for MBE grown GaAs devices
Author :
Kirchner, Peter D. ; Woodall, Jerry M. ; Wright, S.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Contamination; Doping profiles; Gallium arsenide; HEMTs; III-V semiconductor materials; MODFETs; Materials reliability; Molecular beam epitaxial growth; Nitrogen; Transmitters;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21380
