Title :
IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C
Author :
Dupuis, Russell ; Hartman, R.L. ; Nash, F.R.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Accelerated aging; Artificial intelligence; Degradation; Diode lasers; Epitaxial layers; Gallium arsenide; Life testing; MOCVD; Quantum well lasers; Thickness measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21382