InGaAs/InP separated absorption and multiplication regions avalanche photodiode using liquid- and vapor-phase epitaxies

Author

Ando, Hiroaki ; Yamauchi, Yoshiharu ; Nakagome, Hirbshi ; Susa, Nobuhiko ; Kanbe, Hiroshi

Author_Institution

NTT Public Corp., Mushashinoshi, Tokyo, Japan

Volume

17

Issue

2

fYear

1981

fDate

2/1/1981 12:00:00 AM

Firstpage

250

Lastpage

254

Abstract

Heterostructure planar InGaAs/InP avalanche photodiodes, which consist of a vapor-phase epitaxial InP avalanche multiplying layer and a liquid-phase epitaxial In0.53Ga0.47As optical absorption layer, were fabricated. Dark current, multiplication, spectral response, and pulse response characteristics are reported. Diodes were prepared by InGaAs liquid-phase epitaxy on an InP substrate, followed by InP vapor-phase epitaxy. The vapor-phase epitaxy was adopted in the InP growth to avoid ternary layer melting encountered in the liquid-phase process. Cd diffusion was carried out in the InP layer to form a p-n junction. A uniform multiplication factor of 5.5 was observed without a guard ring. The quantum efficiency was 70 percent in the $1-1.6 \\mu$ m wavelength region without antireflection coating. Dark current density was as low as $1.5 \\times 10^{-4}$ A/cm²at 90 percent of breakdown voltage. A fast rise time of 100 ps was observed.

Keywords

Avalanche photodiodes; Optical fiber receivers; Absorption; Avalanche photodiodes; Dark current; Diodes; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optical pulses; P-n junctions; Substrates;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1981.1071070

Filename

1071070