DocumentCode :
1087941
Title :
InGaAs/InP separated absorption and multiplication regions avalanche photodiode using liquid- and vapor-phase epitaxies
Author :
Ando, Hiroaki ; Yamauchi, Yoshiharu ; Nakagome, Hirbshi ; Susa, Nobuhiko ; Kanbe, Hiroshi
Author_Institution :
NTT Public Corp., Mushashinoshi, Tokyo, Japan
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
250
Lastpage :
254
Abstract :
Heterostructure planar InGaAs/InP avalanche photodiodes, which consist of a vapor-phase epitaxial InP avalanche multiplying layer and a liquid-phase epitaxial In0.53 Ga0.47 As optical absorption layer, were fabricated. Dark current, multiplication, spectral response, and pulse response characteristics are reported. Diodes were prepared by InGaAs liquid-phase epitaxy on an InP substrate, followed by InP vapor-phase epitaxy. The vapor-phase epitaxy was adopted in the InP growth to avoid ternary layer melting encountered in the liquid-phase process. Cd diffusion was carried out in the InP layer to form a p-n junction. A uniform multiplication factor of 5.5 was observed without a guard ring. The quantum efficiency was 70 percent in the 
m wavelength region without antireflection coating. Dark current density was as low as 
A/cm2at 90 percent of breakdown voltage. A fast rise time of 100 ps was observed.
m wavelength region without antireflection coating. Dark current density was as low as A/cm2at 90 percent of breakdown voltage. A fast rise time of 100 ps was observed.Keywords :
Avalanche photodiodes; Optical fiber receivers; Absorption; Avalanche photodiodes; Dark current; Diodes; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optical pulses; P-n junctions; Substrates;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071070
Filename :
1071070
Link To Document :
