Title :
IVB-5 amomalous temperature-dependence of the effective bimolecular recombination and the explanation of low T0in 1.3µm InGaAsP light sources
Author :
Su, C.B. ; Olshansky, R. ; Powazinik, W. ; Manning, John
fDate :
11/1/1983 12:00:00 AM
Keywords :
Absorption; Charge carrier density; Charge carrier lifetime; Current measurement; Density measurement; Gallium arsenide; Indium phosphide; Laboratories; Temperature dependence; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21385
