Title :
IVB-6 independent determination of intervalence band absorption and current leakage in GaInAsP/InP - laserstructures
Author :
Mozer, A. ; Menner, Richard ; Pilkuhn, M.H.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Absorption; Charge carrier density; Current measurement; Diode lasers; Gallium arsenide; Indium phosphide; Leakage current; Optical sensors; Temperature dependence; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21386
