Gain spectra in GaInAsP/InP proton-bombarded stripe-geometry DH lasers

Author

Walpole, James N. ; Lind, Thomas A. ; Hsieh, Jaw Jim ; Donnelly, Joseph P.

Author_Institution

Lincoln Laboratory, MIT, Lexington, MA, USA

Volume

17

Issue

2

fYear

1981

fDate

2/1/1981 12:00:00 AM

Firstpage

186

Lastpage

192

Abstract

We have measured gain spectra for TE polarization in a GaInAsP/InP laser as a function of dc bias current below laser threshold. The measurements were made on a low-threshold device with a stripe geometry defined by proton bombardment. A number of other characteristics of this and similar devices from the same wafer are also reported. These data permit the maximum gain coefficient of the active layer gmaxto be evaluated as a function of nominal current density Jnom. We obtain the linear relationship $g_{\\max } = (3.1 \\times 10^{-2}/\\eta_{r})(J_{nom} - \\eta_{r} 5.4 \\times 10^{3})$ , where ηris the radiative quantum efficiency. Our data apply only for large gain ( $g g\\sim 150$ cm^-1) and large Jnombecause the active layer of the test device is thin (0.1 μm).

Keywords

Gallium materials/lasers; Proton radiation effects; Semiconductor device radiation effects; Current density; Current measurement; DH-HEMTs; Gain measurement; Geometrical optics; Indium phosphide; Polarization; Protons; Tellurium; Testing;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1981.1071075

Filename

1071075