• DocumentCode
    1087999
  • Title

    The crystallization path: A way to the GaxIn1-xAsyP1-yphase diagram

  • Author

    Cremoux, B. ; Cremoux, Baudouin De

  • Author_Institution
    Laboratoire de Central Recherches, Thomson CSF, Orsay, France
  • Volume
    17
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    123
  • Lastpage
    127
  • Abstract
    It is shown that already existing thermodynamic models can give a good description of the liquid-solid equilibrium in the GaInAsP system. After a reexamination of the parameters used in the models, they are compared to the reported liquid-phase epitaxy experiments and found in agreement provided that the effect of supersaturation is taken into account along the crystallization path and that alloys which are grown lattice matched on
  • Keywords
    Gallium materials/devices; Crystallization; Epitaxial growth; Indium phosphide; Lattices; Optical devices; Optical saturation; Semiconductor process modeling; Solid modeling; Substrates; Thermodynamics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071076
  • Filename
    1071076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087999