DocumentCode :
108802
Title :
The Invention and Demonstration of the IGBT [A Look Back]
Author :
Shenai, Krishna
Volume :
2
Issue :
2
fYear :
2015
fDate :
Jun-15
Firstpage :
12
Lastpage :
16
Abstract :
Much of the credit for 20th-century advances in computing and communication goes to the silicon transistor and the integrated circuit. The same may be said for the silicon insulated gate bipolar transistor (IGBT) with respect to the impending revolution taking place in energy technology. The silicon IGBT offers unprecedented energy efficiency when switching electrical power in the range of few hundred kilowatts to multimegawatts at a low manufacturing cost. It is transforming the electric utility, transportation, telecommunication, manufacturing, and medical infrastructures in a manner never seen before. This article pertains to the discovery and demonstration of early IGBT devices.
Keywords :
elemental semiconductors; insulated gate bipolar transistors; power semiconductor switches; silicon; IGBT devices; Si; electric utility; energy efficiency; integrated circuit; medical infrastructures; silicon IGBT; silicon insulated gate bipolar transistor; telecommunication; transportation; History; Insulated gate bipolar transistors; Logic gates; MOSFET; Performance evaluation; Thyristors;
fLanguage :
English
Journal_Title :
Power Electronics Magazine, IEEE
Publisher :
ieee
ISSN :
2329-9207
Type :
jour
DOI :
10.1109/MPEL.2015.2421751
Filename :
7130727
Link To Document :
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