Shallow donor spectroscopy in GaxIn1-xAsyP1-y

Author

Nicholas, Robin J. ; Davidson, A. Murray ; Sessions, Simon J. ; Stradling, R.A.

Author_Institution

St. Andrews University, St. Andrews, Fife, Scotland

Volume

Issue

fYear

1981

fDate

2/1/1981 12:00:00 AM

Firstpage

145

Lastpage

149

Abstract

Transitions between the $1s$ and $2p$ levels of shallow hydrogenic donors have been observed in two samples of high purity GaxIn1-xAsyP1-yby infrared photoconductivity and transmission. The magnetic field dependence of the shallow hydrogenic levels is found to be very accurately predicted by the use of an effective Rydberg constant $R* = R_{0}(m*/m_{0}\\epsilon_{0}^{2})$ where the dielectric constant (ε0) has been determined by interpolation of the values for the alloy constituents, and the effective mass $m*/m_{0}$ is given by the linear interpolation $m*/m_{0} = 0.08 - 0.039y$ . At high magnetic fields, the $2p+$ level is found to show polaron pinning to the LO phonon associated with a "GaxIn1-xAs"-like alloy.

Keywords

Gallium materials/devices; Infrared spectroscopy; Semiconductor device doping; Semiconductor materials measurements; Absorption; Dielectric constant; Effective mass; Impurities; Interpolation; Lattices; Magnetic field measurement; Photoconductivity; Pollution measurement; Spectroscopy;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1981.1071078

Filename

1071078

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088020