DocumentCode :
1088020
Title :
Shallow donor spectroscopy in Gax In1-x Asy P1-y
Author :
Nicholas, Robin J. ; Davidson, A. Murray ; Sessions, Simon J. ; Stradling, R.A.
Author_Institution :
St. Andrews University, St. Andrews, Fife, Scotland
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
145
Lastpage :
149
Abstract :
Transitions between the 
and 
levels of shallow hydrogenic donors have been observed in two samples of high purity Gax In1-x Asy P1-y by infrared photoconductivity and transmission. The magnetic field dependence of the shallow hydrogenic levels is found to be very accurately predicted by the use of an effective Rydberg constant 
where the dielectric constant (ε0 ) has been determined by interpolation of the values for the alloy constituents, and the effective mass 
is given by the linear interpolation 
. At high magnetic fields, the 
level is found to show polaron pinning to the LO phonon associated with a "Gax In1-x As"-like alloy.
and levels of shallow hydrogenic donors have been observed in two samples of high purity Ga where the dielectric constant (ε is given by the linear interpolation . At high magnetic fields, the level is found to show polaron pinning to the LO phonon associated with a "GaKeywords :
Gallium materials/devices; Infrared spectroscopy; Semiconductor device doping; Semiconductor materials measurements; Absorption; Dielectric constant; Effective mass; Impurities; Interpolation; Lattices; Magnetic field measurement; Photoconductivity; Pollution measurement; Spectroscopy;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071078
Filename :
1071078
Link To Document :
