Title :
VA-2 optimization of ion implanted GaAs low noise FET
Author :
Feng, M. ; Kanber, H. ; Eu, V.K. ; Hackett, L.H. ; Yamasaki, H. ; Watkin, E.T. ; Schellenberg, J.M.
Author_Institution :
Hughes Torrance Research Center, Torrance, CA
fDate :
11/1/1983 12:00:00 AM
Keywords :
Buffer layers; FETs; Frequency; Gain; Gallium arsenide; Implants; Ion implantation; MESFETs; Noise figure; Noise measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21390
