Title :
VA-3 state-of-the-art K-band GaAs power field-effect transistors prepared by molecular beam expitaxy
Author :
Saunier, Paul ; Shih, H.D.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Fabrication; Gain; Gallium arsenide; K-band; MESFETs; Microwave FETs; Microwave devices; Molecular beam epitaxial growth; Power generation; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21392
