DocumentCode :
1088047
Title :
Vapor-phase growth of (In,Ga)(As,P) quaternary alloys
Author :
Olsen, Gregory H. ; Zamerowski, T.J.
Author_Institution :
RCA Laboratories, Princeton, NJ., USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
128
Lastpage :
138
Abstract :
Crystal growth techniques for the metal chloride-hydride vapor-phase epitaxy of InGaAsP alloys are described. The growth conditions and gas flows for alloys with energy bandgap wavelengths in the range of 
m are specified. Calibrations for n- and p-type doping and relationships between the photoluminescence spectral half-width and doping level are also presented. Mobility values as high as 4500 cm2/V . s (300 K) and electron diffusion lengths as long as 1.75 μm have been measured in InGaAsP alloys. The growth of alloys over "vee," "dovetail," and circularly defined regions in InP substrates is also discussed.
m are specified. Calibrations for n- and p-type doping and relationships between the photoluminescence spectral half-width and doping level are also presented. Mobility values as high as 4500 cm2/V . s (300 K) and electron diffusion lengths as long as 1.75 μm have been measured in InGaAsP alloys. The growth of alloys over "vee," "dovetail," and circularly defined regions in InP substrates is also discussed.Keywords :
Gallium materials/devices; Calibration; Doping; Electrons; Epitaxial growth; Fluid flow; Indium phosphide; Length measurement; Photoluminescence; Photonic band gap; Substrates;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071080
Filename :
1071080
Link To Document :
