DocumentCode
1088047
Title
Vapor-phase growth of (In,Ga)(As,P) quaternary alloys
Author
Olsen, Gregory H. ; Zamerowski, T.J.
Author_Institution
RCA Laboratories, Princeton, NJ., USA
Volume
17
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
128
Lastpage
138
Abstract
Crystal growth techniques for the metal chloride-hydride vapor-phase epitaxy of InGaAsP alloys are described. The growth conditions and gas flows for alloys with energy bandgap wavelengths in the range of 
m are specified. Calibrations for n- and p-type doping and relationships between the photoluminescence spectral half-width and doping level are also presented. Mobility values as high as 4500 cm2/V . s (300 K) and electron diffusion lengths as long as 1.75 μm have been measured in InGaAsP alloys. The growth of alloys over "vee," "dovetail," and circularly defined regions in InP substrates is also discussed.
m are specified. Calibrations for n- and p-type doping and relationships between the photoluminescence spectral half-width and doping level are also presented. Mobility values as high as 4500 cm2/V . s (300 K) and electron diffusion lengths as long as 1.75 μm have been measured in InGaAsP alloys. The growth of alloys over "vee," "dovetail," and circularly defined regions in InP substrates is also discussed.Keywords
Gallium materials/devices; Calibration; Doping; Electrons; Epitaxial growth; Fluid flow; Indium phosphide; Length measurement; Photoluminescence; Photonic band gap; Substrates;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071080
Filename
1071080
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