DocumentCode :
1088087
Title :
VA-8 germanium MISFETs exhibiting low interface state density using Ge3N4gate insulator
Author :
Rosenberg, James J.
Author_Institution :
Columbia University
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1602
Lastpage :
1602
Keywords :
Analog circuits; Charge carrier processes; Dielectrics and electrical insulation; Electron mobility; FETs; Fabrication; Gallium arsenide; Germanium; Interface states; MISFETs;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21396
Filename :
1483297
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1088087
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