Title :
Thermal parameter extraction for bipolar circuit modelling
Author :
Fox, R.M. ; Lee, S.-G.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A practical method is presented for extracting the thermal spreading resistance of BJTs, which is needed for accurate circuit simulation. The method uses the output resistance as the temperature sensitive parameter. Measurements can be made in the time or frequency domain.
Keywords :
bipolar transistors; semiconductor device models; BJTs; accurate circuit simulation; bipolar circuit modelling; bipolar transistors; models; output resistance; temperature sensitive parameter; thermal spreading resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911070
