DocumentCode :
1088207
Title :
VIA-2 lack of orientation dependence of impact ionization coefficients in InP
Author :
Tabatabaie, N. ; Robbins, V.M. ; Brennan, K.F. ; Hess, K. ; Stillman, G.E.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1608
Lastpage :
1608
Keywords :
Charge carrier processes; Electric variables measurement; Etching; Gallium arsenide; Impact ionization; Indium gallium arsenide; Indium phosphide; Laboratories; Optical fiber communication; Pulse measurements;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21406
Filename :
1483307
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1088207
