• DocumentCode
    1088282
  • Title

    Numerical technique to calculate eigenenergies and eigenstates of quantum wells with arbitrary potential profile

  • Author

    Dave, Digant P.

  • Author_Institution
    Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
  • Volume
    27
  • Issue
    19
  • fYear
    1991
  • Firstpage
    1735
  • Lastpage
    1737
  • Abstract
    A numerical technique for the exact analysis of quantum wells with arbitrary potential profile is presented. Numerical examples for GaAs/AlxGa1-xAs rectangular quantum wells, graded wells and wells with applied electric field are presented. The technique is simple but highly accurate and can be easily implemented on a small computer such as a PC.
  • Keywords
    aluminium compounds; gallium arsenide; numerical methods; semiconductor quantum wells; GaAs-Al xGa 1-xAs; arbitrary potential profile; eigenenergies calculation; eigenstates calculation; exact analysis; graded wells; numerical technique; quantum wells; rectangular quantum wells; small computer implementation; wells with applied electric field;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911080
  • Filename
    132915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088282