DocumentCode
1088295
Title
VIB-3 defect structure and electrical property modifications caused by reactive ion etching and ion beam etching
Author
Fonash, Stephen J. ; Singh, Rajdeep ; Climent, August ; Rohatgi, Ajeet ; Caplan, P. ; Poindexter, E.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1613
Lastpage
1614
Keywords
Acceleration; Annealing; Bonding; Dry etching; Electric variables measurement; Identity-based encryption; Ion beams; Paramagnetic resonance; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21413
Filename
1483314
Link To Document