DocumentCode :
1088325
Title :
VIC-1 lead-europium-selenide-telluride diode lasers grown by molecular beam epitaxy
Author :
Partin, D.L.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1615
Lastpage :
1615
Keywords :
Contact resistance; Diode lasers; Epitaxial layers; Heterojunctions; Infrared detectors; Insulation; Molecular beam epitaxial growth; Photodiodes; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21416
Filename :
1483317
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1088325
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