Title :
Analytical modelling of two-dimensional effects on current gain in small-geometry bipolar transistors
Author :
Rinaldi, N. ; Strollo, A.G.M. ; Spirito, P.
Author_Institution :
Dept. of Electron., Naples Univ., Italy
Abstract :
A model is developed for the current gain of submicrometre bipolar transistors. The model takes into account the actual shape of the emitter-base junction and the effect of carrier recombination at the interface between the intrinsic and extrinsic base, allowing analytical interpretation of the beta dependence on emitter size and spacer geometry.
Keywords :
bipolar transistors; electron-hole recombination; semiconductor device models; analytical modelling; beta dependence; bipolar transistors; carrier recombination; current gain; emitter size; emitter-base junction; model; small-geometry; spacer geometry; two-dimensional effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911084
