Title :
Barrier height enhancement of n-In0.53Ga0.47As Schottky diodes grown by MOCVD technique
Author :
Kordos, P. ; Marso, M. ; Meyer, Roland ; Luth, H.
Author_Institution :
Inst. fur Schicht- und Ionentech., Forschungszentrum Julich, Germany
Abstract :
The barrier height enhancement of n-In0.53Ga0.47As Schottky diodes grown by the MOCVD technique is demonstrated. A 30 nm thin fully depleted p+-In0.53Ga0.47As layer (Zn-doped, NA=1.3*1018 cm-3) is used to enhance the Schottky barrier. Ti is used as a barrier metal and mesa diodes with different barrier contact areas are prepared. The quasi-Schottky diodes exhibit barrier heights in the range 0.58-0.62 eV, i.e. they reach higher values than reported until now. The I-V characteristics show an ideality factor of n=1.03/1.19 and a reverse current density of JR=(3.8/42)*10-5 A/cm2.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; vapour phase epitaxial growth; 0.58 to 0.62 eV; I-V characteristics; In 0.53Ga 0.47As:Zn; MOCVD technique; Schottky diodes; Ti barrier metal; barrier height enhancement; ideality factor; mesa diodes; n-type layer; p + type layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911094
