Theoretical analysis on threshold characteristics of surface-channel MOSFET´s fabricated on a buried Oxide

Simple models for threshold characteristics of surface-channel MOSFET´s, which are fabricated on a buried oxide covered by an electric field shielding layer, are proposed. The electric field shielding effect is taken into account when the Poisson´s equation is solved. Threshold voltage expressions are derived from the solution of the Poisson´s equation and the surface-channel charge neutrality relationship. Theoretical analysis shows that the thinner silicon layer leads to enhancement of the electric field which results in the reduction of the short-channel effect.