A low-frequency noise analysis using the two-dimensional numerical analysis method

Author

Sano, Eiichi ; Tsukahara, Tsuneo ; Kimura, Tadakatsu

Author_Institution

Musashino Electrical Communication Laboratory, NTT, Musashino-shi Tokyo, Japan

Volume

30

Issue

12

fYear

1983

fDate

12/1/1983 12:00:00 AM

Firstpage

1699

Lastpage

1704

Abstract

A low-frequency ( $1/f$ ) noise analysis is presented for a MOSFET. Poisson\´s equation and current continuity equation are numerically Solved to determine hole and electron concentrations in two dimensions, The Power spectrum of the fluctuation in the drain current $S_{{I}_{d}}$ is calculated by using obtained hole and electron concentrations, current distribution, and mobility distribution, based on the number fluctuation (NF) and mobility fluctuation (MF) models. It is found, from the comparison with experiments for n- and p-channel surface mode MOSFET\´s, that both NF and MF models can explain noise characteristics for surface-mode MOSFET\´s. In the case of a depletion-mode MOSFET, the MF model shows that $S_{{I}_{d}}$ is proportional to drain current id, which is in agreement with the experimental result for a commercial depletion-mode MOSFET. However, the NF model cannot explain the $S_{{I}_{d}} \\alpha I_{d}$ characteristic.

Keywords

Charge carrier processes; Current distribution; Electron mobility; Fluctuations; Low-frequency noise; MOSFET circuits; Noise measurement; Numerical analysis; Poisson equations; Superluminescent diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21433

Filename

1483334