• DocumentCode
    1088581
  • Title

    Transient electronic transport in InP under the condition of high-energy electron injection

  • Author

    Brennan, Kevin ; Hess, Karl ; Tang, Jeffrey Yuh-Fonc ; Iafrate, Gerald J.

  • Author_Institution
    University of Illinois at Urbana-Champaign, Urbana, IL
  • Volume
    30
  • Issue
    12
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    1750
  • Lastpage
    1754
  • Abstract
    Transient transport of electrons in InP is studied under the condition of high-energy electron injection. This study makes use of a Monte Carlo simulation with the unique inclusion of realistic band-structure as derived from an empirical pseudopotential method. The results obtained herein for InP are qualitatively similar to those previously obtained by the authors for GaAs. Quantitatively, it is found that ultra-high electron drift velocities (≈108cm/s) persist for much higher electric fields and over much longer distance of electron traversal in InP as compared to GaAs.
  • Keywords
    Acceleration; Acoustic scattering; Electron mobility; Fabrication; Gallium arsenide; Geometry; Indium phosphide; Satellites; Tail; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21440
  • Filename
    1483341
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088581