Planar Be-implanted GaAs junction formation using swept-line electron beam annealing

Comparative studies of swept-line electron beam annealing and furnace annealing of Be implanted in n-GaAs doped with Si are presented. Electron beam annealing causes less Be redistribution and results in fewer traps than furnace annealing, but causes site mixing Of amphoteric Si. Planar Be-implanted junctions result in a p⁺-v-n structure for the electron beam annealed samples, similar to thermally quenched samples. We believe that this is caused by the incorporation of amphoteric Si on Ga and As sites during transient annealing, which produces results similar to thermal quenching.