Title :
Temperature dependence of ionisation coefficients in silicon derived from physical model (MOSFETs)
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Abstract :
Electron and hole ionisation coefficients from 200 to 500 K have been calculated using the lucky drift model of impact ionisation calibrated to measurements made at 300 K. The results are fitted to two- and three-parameter empirical relationships for the ionisation coefficient against field, which can be used in device modelling.
Keywords :
elemental semiconductors; impact ionisation; insulated gate field effect transistors; semiconductor device models; silicon; 200 to 500 K; device modelling; electron ionisation; hole ionisation; impact ionisation; ionisation coefficients; lucky drift model; physical model; three-parameter empirical relationships; two-parameter empirical relationships;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911237
