• DocumentCode
    1088695
  • Title

    (InAs)1/(GaAs)4 superlattice strained quantum well laser at 980 nm

  • Author

    Chand, Naresh ; Dutta, N.K. ; Chu, S.N.G. ; Lopata, J.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    27
  • Issue
    22
  • fYear
    1991
  • Firstpage
    2009
  • Lastpage
    2011
  • Abstract
    The first successful MBE growth of (InAs)1/(GaAs)4 short-period superlattice (SPS) strained quantum well lasers emitting at approximately 980 nm is reported. The SPS consists of six periods of one and four monolayers of InAs and GaAs, respectively. The measured threshold current density was approximately 100 A cm-2 for 0.96 mm long lasers. Devices have operated up to 170 degrees C with a characteristic temperature T0 of 148 K. The (InAs)m/(GaAs)n superlattice is an ordered counterpart of the InGaAs random alloy, and provides an alternative method fabricating high speed electronic and photonic devices.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; 980 nm; III-V semiconductors; InAs-GaAs; MBE growth; characteristic temperature; short-period superlattice; strained quantum well lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911244
  • Filename
    132959
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088695