DocumentCode :
1088712
Title :
A 1.8-GHz CMOS Power Amplifier Using a Dual-Primary Transformer With Improved Efficiency in the Low Power Region
Author :
Park, Changkun ; Han, Jeonghu ; Kim, Haksun ; Hong, Songcheol
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon
Volume :
56
Issue :
4
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
782
Lastpage :
792
Abstract :
A 1.8-GHz CMOS power amplifier for a polar transmitter is implemented with a 0.18- RF CMOS process. The matching components, including the input and output transformers, were integrated. A dual-primary transformer is proposed in order to increase the efficiency in the low power region of the amplifier. The loss induced by the matching network for the low-output power region is minimized using the dual-primary transformer. The amplifier achieved a power-added efficiency of 40.7% at a maximum output power of 31.6 dBm. The dynamic range was 34 dB for a supply voltage that ranged from 0.5 to 3.3 V. The low power efficiency was 32% at the output power of 16 dBm.
Keywords :
CMOS integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; power integrated circuits; power transformers; CMOS power amplifier; dual-primary transformer; efficiency 32 percent; efficiency 40.7 percent; frequency 1.8 GHz; low power region; polar transmitter; power-added efficiency; size 0.18 mum; voltage 0.5 V to 3.3 V; Class-E; dynamic range; global system for mobile communication (GSM); load impedance; mode locking; polar transmitter; transformer; variable load;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2008.918152
Filename :
4460584
Link To Document :
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