DocumentCode
1088716
Title
Profile estimation of high-concentration arsenic or boron diffusion in silicon
Author
Way-Seen Wang ; Lo, Yu-Hwa
Author_Institution
National Taiwan University, Taiwan, Republic of China
Volume
30
Issue
12
fYear
1983
fDate
12/1/1983 12:00:00 AM
Firstpage
1828
Lastpage
1831
Abstract
A unified analytic approximation for high-concentration arsenic and boron diffusion profiles is presented. The unified profile is represented by a quadratic expression with coefficients determined by the impurity concentration near the surface and the total number of diffused impurities. The junction depth, the total number of impurities, and the sheet resistance calculated by this unified approximate profile are very close to recent results. Application of this approximate expression to the profile estimation of high-concentration phosphorus diffusion in silicon is also presented.
Keywords
Biographies; Boron; CMOS process; Electron devices; Insulation; MOSFETs; Materials science and technology; Microelectronics; Semiconductor impurities; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21453
Filename
1483354
Link To Document