Title :
Low threshold InGaAsP/InP buried crescent laser with double current confinement structure
Author :
Oomura, Etsuji ; Murotani, Toshio ; Higuchi, Hideyo ; Namizaki, Hirohumi ; Susaki, Wataru
Author_Institution :
Semiconductor Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fDate :
5/1/1981 12:00:00 AM
Abstract :
An InGaAsP/InP laser diode emitting at 1.3 μm with a crescent shaped active region is described. The active region is completely embedded in InP by a two-step LPE technique, and a double current confinement scheme is incorporated with two reverse biased p-n junctions at both sides of the active layer. A threshold current as low as 20 mA has been achieved in CW operation at room temperature. Fundamental transverse mode operation with linear light output-current characteristics and single longitudinal mode oscillation have been obtained.
Keywords :
CW lasers; Gallium materials/lasers; Laser modes; Optical fiber transmitters; Diode lasers; Fiber lasers; Gallium arsenide; Indium phosphide; Laser modes; Laser stability; Optical fiber communication; Temperature sensors; Threshold current; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071153
