Title :
Resonant tunnelling microwave detector diode for power levelling and limiting applications
Author :
Syme, R.T. ; Kelly, M.J. ; Condie, A. ; Dale, I.
Author_Institution :
Hirst Res. Centre, GEC-Marconi Ltd., Wembley, UK
Abstract :
Resonant-tunnelling GaAs/AlAs diodes have been fabricated and tested as zero-bias microwave detectors at X-band (9.375 GHz). The transfer function is found to exhibit a sharp dip over a small input power range near 0 dBm, with a square law region below and a linear law region above this dip. An explanation as to how this dip arises and an indication of how a diode with such a transfer function could be used in power levelling and limiting applications are given.
Keywords :
III-V semiconductors; gallium arsenide; microwave detectors; resonant tunnelling devices; semiconductor diodes; solid-state microwave devices; 9.375 GHz; GaAs-AlAs; III-V semiconductors; X-band; input power range; limiting; linear law region; microwave detector diode; power levelling; resonant-tunneling diodes; square law region; transfer function; zero-bias microwave detectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911254
