Title :
Low-noise MESFET´s for ion-implanted GaAs MMIC´s
Author :
Gupta, Aditya K. ; Siu, D.P. ; Ip, Kwant T. ; Petersen, W.C.
Author_Institution :
Rockwell International, Thousand Oaks, CA
fDate :
12/1/1983 12:00:00 AM
Abstract :
Fabrication considerations for low-noise FETs in ion-implanted GaAs monolithic microwave integrated circuits (MMIC´s) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FETs fabricated along these lines show good microwave performance through 18 GHz, approaching the performance available from similar discrete FETs. 0.8-µm gate-length MMIC FETs with a noise figure Of 2.9 dB and associated gain of 6.1 dB at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMIC´s:
Keywords :
Fabrication; Gallium arsenide; MESFETs; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21460
