DocumentCode
1088803
Title
Beamwidth for asymmetric and multilayer semiconductor laser structures
Author
Buus, Jens
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
Volume
17
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
732
Lastpage
736
Abstract
An expression for the far field of the fundamental TE0 mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.
Keywords
Gallium materials/lasers; Semiconductor lasers; Fiber lasers; Laser modes; Laser theory; Nonhomogeneous media; Optical waveguides; Refractive index; Semiconductor lasers; Semiconductor waveguides; Slabs; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071157
Filename
1071157
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