Title :
A Low-Noise K-Band VCO Based on Room-Temperature Ferroelectric Varactors
Author :
Norling, Martin ; Vorobiev, Andrei ; Jacobsson, Harald ; Gevorgian, Spartak
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg
Abstract :
This paper reports a K-band voltage-controlled oscillator based on room-temperature ferroelectric varactors. The circuit is realized as a hybrid module where flip-chip transistors are mounted on a silicon substrate with integrated ferroelectric varactors and passive circuitry. The size of the module is 4.7times2.2 mm2. The measured center frequency is 16.5 GHz with a linear tunability of 6.7% and an output power of 3 dBmplusmn1 dB over the tuning range. The measured phase noise at center frequency is -95 dBc/Hz at 100-kHz offset. Another version of the oscillator is measured operating at 19.6 GHz with a tunability of 3.3% and a phase noise of -102 dBc/Hz at 100-kHz offset
Keywords :
elemental semiconductors; ferroelectric devices; flip-chip devices; passive networks; silicon; varactors; voltage-controlled oscillators; 100 kHz; 16.5 GHz; 19.6 GHz; ferroelectric capacitors; flip-chip transistors; heterojunction bipolar transistors; low-noise X-band VCO; passive circuitry; phase noise; room-temperature ferroelectric varactors; voltage-controlled oscillator; Ferroelectric materials; Frequency measurement; Integrated circuit measurements; K-band; Noise measurement; Phase measurement; Phase noise; Silicon; Varactors; Voltage-controlled oscillators; Ferroelectric capacitors; heterojunction bipolar transistors (HBTs); voltage-controlled oscillators (VCOs);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.889332
