• DocumentCode
    1088849
  • Title

    dV/dt Breakdown in power MOSFET´s

  • Author

    Kuo, D.-S. ; Hu, C. ; Chi, M.H.

  • Author_Institution
    University of California, Berkeley, CA
  • Volume
    4
  • Issue
    1
  • fYear
    1983
  • fDate
    1/1/1983 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A model for dV/dt breakdown in power MOSFET\´s is proposed. This model allows quantitative analysis of dV/dt limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.
  • Keywords
    Circuit testing; DVD; Electric breakdown; Equations; Immune system; MOSFET circuits; Power MOSFET; Semiconductor process modeling; Switching circuits; Switching loss;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25623
  • Filename
    1483367
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088849