• DocumentCode
    1088890
  • Title

    1/f noise in modulation-doped field effect transistors

  • Author

    Duh, K.H. ; van der Ziel, A. ; Morkoc, H.

  • Author_Institution
    University of Minnesota, Minneapolis, MN
  • Volume
    4
  • Issue
    1
  • fYear
    1983
  • fDate
    1/1/1983 12:00:00 AM
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    Low frequency noise measurements are reported in modulation-doped GaAs field effect transistors. The noise spectrum is 1/f and is relatively large. At a given frequency the equivalent saturated diode current Ieqvaries as V2, as expected for a fluctuating resistor, and saturates when the characteristic saturates.
  • Keywords
    Diodes; Epitaxial layers; FETs; Frequency measurement; Gallium arsenide; HEMTs; Low-frequency noise; MODFETs; Noise measurement; Resistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25628
  • Filename
    1483372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088890