• DocumentCode
    1088967
  • Title

    Proton implantation isolation for microwave monolithic circuits

  • Author

    Esfandiari, R. ; Feng, M. ; Kanber, H.

  • Author_Institution
    Hughes Aircraft Company, Torrance, CA
  • Volume
    4
  • Issue
    2
  • fYear
    1983
  • fDate
    2/1/1983 12:00:00 AM
  • Firstpage
    29
  • Lastpage
    31
  • Abstract
    We show that proton implantation isolation effectively reduces RF losses for microwave monolithic integrated circuits and that the degree of effectiveness is a function of the induced damage depth. RF losses are mostly due to the current conduction in semiconducting active or buffer layer.
  • Keywords
    Buffer layers; Conductivity; Dielectric loss measurement; Gallium arsenide; Loss measurement; MMICs; Microwave circuits; Microwave devices; Protons; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25636
  • Filename
    1483380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088967