Title :
Laser chemical etching of vias in GaAs
Author :
Tucker, A.W. ; Birnbaum, M.
Author_Institution :
The Aerospace Corporation, Los Angeles, CA
fDate :
2/1/1983 12:00:00 AM
Abstract :
Rapid drilling of vias in thick wafers (381 µm) of GaAs has been achieved by a laser assisted etching process. The technique utilized a cw visible argon ion laser and an etchant gas of low pressure Cl2. Data on the dependence of the etch rate on the laser power, wavelength, and Cl2gas pressure are presented.
Keywords :
Argon; Chemical lasers; Drilling; Etching; Gallium arsenide; Gas lasers; Laser beams; Masers; Power lasers; Semiconductor lasers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25639
