Title :
Submicron GaAs microwave FET´s with low parasitic gate and source resistances
Author :
Bandy, S.G. ; Chai, Y.G. ; Chow, R. ; Nishimoto, C.K. ; Zdasiuk, G.
Author_Institution :
Varian Associates, Inc., Solid State Laboratory, Palo Alto, CA
fDate :
2/1/1983 12:00:00 AM
Abstract :
The substantial reduction in gate metallization resistance and improvement in performance of submicron-gate GaAs FET´s has been achieved by employing a mushroom profile defined by electron-beam exposure. Using MBE growth of buffer, channel, and n+ contact layers, minimum noise figures of 1.0-1.1 dB have been demonstrated at 8 GHz, with associated gains of 13-14 dB.
Keywords :
Electron beams; FETs; Gallium arsenide; Geometry; Metallization; Molecular beam epitaxial growth; Resists; Substrates; Temperature; Tin;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25640
