DocumentCode
1089012
Title
Very low threshold visible TS lasers
Author
Wada, Masaru ; Itoh, Kunio ; Shimizu, Hirokazu ; Sugino, Takashi ; Teramoto, I.
Author_Institution
Semiconductor Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
17
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
776
Lastpage
780
Abstract
Fundamental transverse mode lasers with very low threshold currents have been realized by use of the modified terraced substrate (TS) geometry. The threshold currents of 250 μm cavity length lasers at room temperature are typically 20-30 mA for wavelengths around 750 nm. In the 710 nm laser, which is the shortest lasing wavelength in this work, the threshold is as low as 70 mA in CW operation. The 726 nm laser was operated for only 150 h, while a lifetime longer than 10 000 h is expected for TS lasers with a lasing wavelength longer than 750 nm.
Keywords
Gallium materials/lasers; Visible lasers; Chemical lasers; Geometrical optics; Laser modes; Optical device fabrication; Refractive index; Semiconductor lasers; Stress; Substrates; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071176
Filename
1071176
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