• DocumentCode
    1089012
  • Title

    Very low threshold visible TS lasers

  • Author

    Wada, Masaru ; Itoh, Kunio ; Shimizu, Hirokazu ; Sugino, Takashi ; Teramoto, I.

  • Author_Institution
    Semiconductor Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
  • Volume
    17
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    776
  • Lastpage
    780
  • Abstract
    Fundamental transverse mode lasers with very low threshold currents have been realized by use of the modified terraced substrate (TS) geometry. The threshold currents of 250 μm cavity length lasers at room temperature are typically 20-30 mA for wavelengths around 750 nm. In the 710 nm laser, which is the shortest lasing wavelength in this work, the threshold is as low as 70 mA in CW operation. The 726 nm laser was operated for only 150 h, while a lifetime longer than 10 000 h is expected for TS lasers with a lasing wavelength longer than 750 nm.
  • Keywords
    Gallium materials/lasers; Visible lasers; Chemical lasers; Geometrical optics; Laser modes; Optical device fabrication; Refractive index; Semiconductor lasers; Stress; Substrates; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071176
  • Filename
    1071176