• DocumentCode
    1089062
  • Title

    n-Channel MOS ring oscillators fabricated in electron-beam recrystallized silicon-on-insulator

  • Author

    Ohmura, Y. ; Shibata, K. ; Inoue, T. ; Yoshii, T. ; Horiike, Y. ; Horiike, Y.

  • Author_Institution
    Toshiba Research and Development Center, Kawasaki, Japan
  • Volume
    4
  • Issue
    3
  • fYear
    1983
  • fDate
    3/1/1983 12:00:00 AM
  • Firstpage
    57
  • Lastpage
    59
  • Abstract
    Both 25-stage n-MOS enhancement driver/enhancement load (E/E) and enhancement driver/depletion load (E/D) ring oscillators with a fan out of one composed of 4-µm channel length transistors have been successfully fabricated in CW electron-beam recrystallized polysilicon/Si3N4/SiO2/
  • Keywords
    Driver circuits; MOSFETs; Optical films; Power dissipation; Ring lasers; Ring oscillators; Silicon on insulator technology; Threshold voltage; Voltage control; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25646
  • Filename
    1483390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089062