DocumentCode :
1089062
Title :
n-Channel MOS ring oscillators fabricated in electron-beam recrystallized silicon-on-insulator
Author :
Ohmura, Y. ; Shibata, K. ; Inoue, T. ; Yoshii, T. ; Horiike, Y. ; Horiike, Y.
Author_Institution :
Toshiba Research and Development Center, Kawasaki, Japan
Volume :
4
Issue :
3
fYear :
1983
fDate :
3/1/1983 12:00:00 AM
Firstpage :
57
Lastpage :
59
Abstract :
Both 25-stage n-MOS enhancement driver/enhancement load (E/E) and enhancement driver/depletion load (E/D) ring oscillators with a fan out of one composed of 4-µm channel length transistors have been successfully fabricated in CW electron-beam recrystallized polysilicon/Si3N4/SiO2/
Keywords :
Driver circuits; MOSFETs; Optical films; Power dissipation; Ring lasers; Ring oscillators; Silicon on insulator technology; Threshold voltage; Voltage control; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25646
Filename :
1483390
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1089062
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