Title :
Comments on "Mobility degradation due to the gate field in the inversion layer of MOSFET\´s"
Author_Institution :
Technische Universitat Wien, Vienna, Austria
fDate :
3/1/1983 12:00:00 AM
Keywords :
Charge carrier processes; Degradation; Electron devices; Electron mobility; Energy conservation; Heating; MOSFET circuits; Power supplies; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25648
